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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1499
*
DESCRIPTION *With TO-220Fa package *High transition frequency *Complement to type 2SB1063 *Wide area of safe operation APPLICATIONS *For high power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 5 8 2.0 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=30mA; IB=0 IC=3A; IB=0.3A IC=3A ; VCE=5V VCB=100V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A; VCE=5V f=1MHz ; VCB=10V 20 40 20 MIN 100
2SD1499
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB
TYP.
MAX
UNIT V
2.0 1.8 50 50
V V A A
200
20 170
MHz pF
hFE-2 Classifications R 40-80 Q 60-120 P 100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1499
Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm)
3


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